完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | HWANG Wei | en_US |
dc.contributor.author | WANG Dao-Ping | en_US |
dc.date.accessioned | 2015-12-04T07:03:10Z | - |
dc.date.available | 2015-12-04T07:03:10Z | - |
dc.date.issued | 2015-06-18 | en_US |
dc.identifier.govdoc | G11C011/412 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/128671 | - |
dc.description.abstract | A multi-port SRAM with shared write bit-line architecture and selective read path for low power operation includes a first memory cell, a second memory cell, and a common switch set. The second memory cell makes use of the common switch set to share the A-port write bit-line and the B-port write bit-line with the first memory cell so as to reduce half write bit-line number and reduce the write current consumption caused by pre-charging the bit-line to VDD. It also provides a selective read path structure for read operation. Replacing the ground connection in the read port with a virtual VSS controlled by a Y-select signal reduces read-port current consumption. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | MULTI-PORT SRAM WITH SHARED WRITE BIT-LINE ARCHITECTURE AND SELECTIVE READ PATH FOR LOW POWER OPERATION | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20150170734 | zh_TW |
顯示於類別: | 專利資料 |