標題: | MULTI-PORT SRAM WITH SHARED WRITE BIT-LINE ARCHITECTURE AND SELECTIVE READ PATH FOR LOW POWER OPERATION |
作者: | HWANG Wei WANG Dao-Ping |
公開日期: | 18-六月-2015 |
摘要: | A multi-port SRAM with shared write bit-line architecture and selective read path for low power operation includes a first memory cell, a second memory cell, and a common switch set. The second memory cell makes use of the common switch set to share the A-port write bit-line and the B-port write bit-line with the first memory cell so as to reduce half write bit-line number and reduce the write current consumption caused by pre-charging the bit-line to VDD. It also provides a selective read path structure for read operation. Replacing the ground connection in the read port with a virtual VSS controlled by a Y-select signal reduces read-port current consumption. |
官方說明文件#: | G11C011/412 |
URI: | http://hdl.handle.net/11536/128671 |
專利國: | USA |
專利號碼: | 20150170734 |
顯示於類別: | 專利資料 |