GATE STRUCTURE

標題:	GATE STRUCTURE
作者:	CHANG Yi KUO Chien-I HSU Heng-Tung
公開日期:	20-八月-2015
摘要:	The present invention discloses a gate structure, which is applied for an electronic component comprising a substrate and an active region defined thereon, and such the gate structure is disposed in the active region and is a T-shaped gate having a stem with a height of 250 nm. Preferably, the gate structure has a gate length of 60 nm.
官方說明文件#:	H01L029/423 H01L021/285 H01L029/778
URI:	http://hdl.handle.net/11536/128683
專利國:	USA
專利號碼:	20150236109
顯示於類別：	專利資料

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