GATE STRUCTURE

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DC Field	Value	Language
dc.contributor.author	CHANG Yi	en_US
dc.contributor.author	KUO Chien-I	en_US
dc.contributor.author	HSU Heng-Tung	en_US
dc.date.accessioned	2015-12-04T07:03:12Z	-
dc.date.available	2015-12-04T07:03:12Z	-
dc.date.issued	2015-08-20	en_US
dc.identifier.govdoc	H01L029/423	zh_TW
dc.identifier.govdoc	H01L021/285	zh_TW
dc.identifier.govdoc	H01L029/778	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/128683	-
dc.description.abstract	The present invention discloses a gate structure, which is applied for an electronic component comprising a substrate and an active region defined thereon, and such the gate structure is disposed in the active region and is a T-shaped gate having a stem with a height of 250 nm. Preferably, the gate structure has a gate length of 60 nm.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	GATE STRUCTURE	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20150236109	zh_TW
Appears in Collections:	Patents

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