GATE STRUCTURE

Title:	GATE STRUCTURE
Authors:	CHANG Yi KUO Chien-I HSU Heng-Tung
Issue Date:	20-Aug-2015
Abstract:	The present invention discloses a gate structure, which is applied for an electronic component comprising a substrate and an active region defined thereon, and such the gate structure is disposed in the active region and is a T-shaped gate having a stem with a height of 250 nm. Preferably, the gate structure has a gate length of 60 nm.
Gov't Doc #:	H01L029/423 H01L021/285 H01L029/778
URI:	http://hdl.handle.net/11536/128683
Patent Country:	USA
Patent Number:	20150236109
Appears in Collections:	Patents

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.