標題: Effect of trimethylsilylation on the film stress of mesoporous silica ultralow-k film stacks
作者: Chen, JY
Pan, FM
Lin, DX
Cho, AT
Chao, KJ
Chang, L
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2006
摘要: The film stress of the ultralow-k mesoporous silica thin film and the alpha-SiC:H/ mesoporous silica film stack was studied. The as-calcined mesoporous silica exhibits a tensile film stress due to its volume contraction during bake and calcination. Trimethylsilylation of the mesoporous film results in a spring-back effect and thereby improves the mechanical properties of the porous film. Deposition of a plasma-assisted alpha-SiC:H layer on the mesoporous silica thin film can also relieve the tensile stress, and even made the film stack become compressively stressed. This is ascribed to the stress compensation and alkoxylation occurring during the alpha-SiC:H deposition.
URI: http://hdl.handle.net/11536/12882
http://dx.doi.org/10.1149/1.2193074
ISSN: 1099-0062
DOI: 10.1149/1.2193074
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 9
Issue: 6
起始頁: G215
結束頁: G218
顯示於類別:期刊論文