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dc.contributor.authorKao, CHen_US
dc.contributor.authorLai, CSen_US
dc.contributor.authorLee, CLen_US
dc.date.accessioned2014-12-08T15:17:51Z-
dc.date.available2014-12-08T15:17:51Z-
dc.date.issued2006en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/12938-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2138671en_US
dc.description.abstractIn this paper, rapid thermal processing (RTP) N2O polyoxides were studied in terms of oxidation temperature and thickness with O-2 oxidation polyoxides as comparison. Atomic force microscopy, transmission electron microscopy, and secondary ion mass spectroscopy measurements were employed to correlate the electrical characteristics with the physical structures. Results showed that RTP N2O-grown polyoxides exhibited better characteristics on the leakage current, E-bd, trappings and Q(bd). It was found that it was the proper amount of nitrogen incorporated in the polyoxide improving the interface of the polyoxide/polysilicon, consequently improving the electrical quality. The initial hole-trapping phenomenon during the constant current stress, which was due to the incorporated nitrogen, was also observed in the N2O-grown polyoxides. The two-step RTP process, i.e., first RTP oxidizing the polysilicon in O-2 and then RTP oxidizing in N2O, could achieve polyoxide of good characteristics by incorporating the proper amount of nitrogen into the polyoxide. (c) 2005 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleOxide grown on polycrystal silicon by rapid thermal oxidation in N2Oen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2138671en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume153en_US
dc.citation.issue2en_US
dc.citation.spageG128en_US
dc.citation.epageG133en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000234543400060-
dc.citation.woscount5-
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