標題: Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications
作者: Yu, Chang-Hung
Fan, Ming-Long
Yu, Kuan-Chin
Hu, Vita Pi-Ho
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: 2-D materials;bilayer;monolayer;SRAM cell;transition metal dichalcogenide (TMD)
公開日期: 1-Feb-2016
摘要: For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications.
URI: http://dx.doi.org/10.1109/TED.2015.2505064
http://hdl.handle.net/11536/129639
ISSN: 0018-9383
DOI: 10.1109/TED.2015.2505064
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
起始頁: 625
結束頁: 630
Appears in Collections:Articles