完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | 張翼 | zh_TW |
| dc.contributor.author | CHANG EDWARD YI | en_US |
| dc.date.accessioned | 2016-03-28T08:17:20Z | - |
| dc.date.available | 2016-03-28T08:17:20Z | - |
| dc.date.issued | 2015 | en_US |
| dc.identifier.govdoc | MOST104-2221-E009-055-MY2 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/129890 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=11574448&docId=469498 | en_US |
| dc.description.sponsorship | 科技部 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 高頻功率氮化銦鋁/氮化鎵高電子遷移率電晶體技術開發與研究 | zh_TW |
| dc.title | Development of InAlN/GaN Hemt for High Power and High Frequency Applications | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 國立交通大學材料科學與工程學系（所） | zh_TW |
| 顯示於類別： | 研究計畫 | |
