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dc.contributor.author陳明哲zh_TW
dc.contributor.authorCHEN MING-JERen_US
dc.date.accessioned2016-03-28T08:17:23Z-
dc.date.available2016-03-28T08:17:23Z-
dc.date.issued2015en_US
dc.identifier.govdocMOST104-2221-E009-058-MY3zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/129960-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=11588143&docId=473262en_US
dc.description.sponsorship科技部zh_TW
dc.language.isozh_TWen_US
dc.title平面及鰭狀場效電晶體高階奈米缺陷統計物理模式:隨機電報雜訊和偏壓溫度不穩度zh_TW
dc.titleAdvanced Nanoscale Defect Statistical Model for Random Telegraph Signals and Bias and Temperature Instabilities in Planar Mosfets and FinFETsen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
顯示於類別:研究計畫