| 標題: | 氮化銦鎵/氮化鋁量子點之室溫單光子與糾纏光子源 Ingan/Aln Quantum Dots for Room-Temperature Single Photon and Entangled Photon Emitters |
| 作者: | 張文豪 CHANG WEN HAO 國立交通大學電子物理學系（所） |
| 公開日期: | 2015 |
| 官方說明文件#: | MOST103-2923-M009-002-MY3 |
| URI: | http://hdl.handle.net/11536/130536 https://www.grb.gov.tw/search/planDetail?id=11267388&docId=454194 |
| Appears in Collections: | Research Plans |
- 氮化銦鎵/氮化鋁量子點之室溫單光子與糾纏光子源 / 張文豪;CHANG WEN HAO
- 氮化銦鎵/氮化鋁量子點之室溫單光子與糾纏光子源 / 張文豪;CHANG WEN HAO
- 氮化銦鎵/氮化鋁量子點之室溫單光子與糾纏光子源 /
- Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy / Zhuravlev, K. S.;Gulyaev, D. V.;Aleksandrov, I. A.;Malin, T. V.;Mansurov, V. G.
- 氮化銦鎵奈米結構之結構與光學特性 / 蔡伩哲;Tsai, Wen-Che;張文豪;李明知;Chang, Wen-Hao
- Effects of growth interruption time on InGaN/GaN quantum dots grown by metal organic chemical vapor deposition - art. no. 612102 / Yao, H. H.;Huang, G. S.;Lu, T. C.;Chen, C. Y.;Liang, W. D.
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