Suppressing phosphorus diffusion in germanium by carbon incorporation

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DC 欄位	值	語言
dc.contributor.author	Luo, G	en_US
dc.contributor.author	Cheng, CC	en_US
dc.contributor.author	Huang, CY	en_US
dc.contributor.author	Hsu, SL	en_US
dc.contributor.author	Chien, CH	en_US
dc.contributor.author	Ni, WX	en_US
dc.contributor.author	Chang, CY	en_US
dc.date.accessioned	2014-12-08T15:18:03Z	-
dc.date.available	2014-12-08T15:18:03Z	-
dc.date.issued	2005-11-24	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20052999	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13054	-
dc.description.abstract	A problem in the Ge MOSFET process is that the phosphor-us for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.	en_US
dc.language.iso	en_US	en_US
dc.title	Suppressing phosphorus diffusion in germanium by carbon incorporation	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20052999	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	41	en_US
dc.citation.issue	24	en_US
dc.citation.spage	1354	en_US
dc.citation.epage	1355	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000234063300032	-
dc.citation.woscount	7	-
顯示於類別：	期刊論文

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