完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Luo, G | en_US |
dc.contributor.author | Cheng, CC | en_US |
dc.contributor.author | Huang, CY | en_US |
dc.contributor.author | Hsu, SL | en_US |
dc.contributor.author | Chien, CH | en_US |
dc.contributor.author | Ni, WX | en_US |
dc.contributor.author | Chang, CY | en_US |
dc.date.accessioned | 2014-12-08T15:18:03Z | - |
dc.date.available | 2014-12-08T15:18:03Z | - |
dc.date.issued | 2005-11-24 | en_US |
dc.identifier.issn | 0013-5194 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1049/el:20052999 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13054 | - |
dc.description.abstract | A problem in the Ge MOSFET process is that the phosphor-us for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Suppressing phosphorus diffusion in germanium by carbon incorporation | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1049/el:20052999 | en_US |
dc.identifier.journal | ELECTRONICS LETTERS | en_US |
dc.citation.volume | 41 | en_US |
dc.citation.issue | 24 | en_US |
dc.citation.spage | 1354 | en_US |
dc.citation.epage | 1355 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000234063300032 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |