Title: | Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization |
Authors: | Wu, YC Chang, TC Liu, PT Wu, YC Chou, CW Tu, CH Lou, JC Chang, CY 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
Issue Date: | 3-Oct-2005 |
Abstract: | This work presents a method for enhancing the mobility of polycrystalline-Si (poly-Si) thin-film transistors (TFTs) by pattern-dependent metal-induced-lateral-crystallization (PDMILC) using nanowire channels. Experimental results indicate that the field-effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of the poly-Si grains increased. The PDMILC poly-Si TFT with ten nanowire channels (M10) had the greatest field-effect mobility, 109.34 cm(2)/V s and the lowest subthreshold swing, 0.23 V/dec, at a gate length of 2 mu m. The field-effect mobility also increased as the gate length in the M10 PDMILC poly-Si TFT device declined, because the number of poly-Si grain-boundary defects was reduced. (C) 2005 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2076436 http://hdl.handle.net/11536/13171 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2076436 |
Journal: | APPLIED PHYSICS LETTERS |
Volume: | 87 |
Issue: | 14 |
End Page: | |
Appears in Collections: | Articles |
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