Title: Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
Authors: Wu, YC
Chang, TC
Liu, PT
Wu, YC
Chou, CW
Tu, CH
Lou, JC
Chang, CY
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
Issue Date: 3-Oct-2005
Abstract: This work presents a method for enhancing the mobility of polycrystalline-Si (poly-Si) thin-film transistors (TFTs) by pattern-dependent metal-induced-lateral-crystallization (PDMILC) using nanowire channels. Experimental results indicate that the field-effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of the poly-Si grains increased. The PDMILC poly-Si TFT with ten nanowire channels (M10) had the greatest field-effect mobility, 109.34 cm(2)/V s and the lowest subthreshold swing, 0.23 V/dec, at a gate length of 2 mu m. The field-effect mobility also increased as the gate length in the M10 PDMILC poly-Si TFT device declined, because the number of poly-Si grain-boundary defects was reduced. (C) 2005 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2076436
http://hdl.handle.net/11536/13171
ISSN: 0003-6951
DOI: 10.1063/1.2076436
Journal: APPLIED PHYSICS LETTERS
Volume: 87
Issue: 14
End Page: 
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