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dc.contributor.authorChen, ILen_US
dc.contributor.authorHsu, WCen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorYu, HCen_US
dc.contributor.authorSung, CPen_US
dc.contributor.authorLu, CMen_US
dc.contributor.authorChiou, CHen_US
dc.contributor.authorWang, JMen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorLee, TDen_US
dc.contributor.authorWang, JSen_US
dc.date.accessioned2014-12-08T15:18:15Z-
dc.date.available2014-12-08T15:18:15Z-
dc.date.issued2005-10-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.7485en_US
dc.identifier.urihttp://hdl.handle.net/11536/13196-
dc.description.abstractA long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214 nm were realized. A measured room-temperature threshold current density of only 173 A/cm(2) for a 2-mm-cavity device and a transparency current density of 66 A/cm(2) were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6 cm(-1), respectively.en_US
dc.language.isoen_USen_US
dc.subjectInGaAsen_US
dc.subjectMOCVDen_US
dc.subjecttransparency current densityen_US
dc.titleLow-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.7485en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.issue10en_US
dc.citation.spage7485en_US
dc.citation.epage7487en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000232739300058-
dc.citation.woscount4-
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