| Title: | 高電子遷移率電晶體及其製造方法 |
| Authors: | 張翼 林岳欽 謝廷恩 |
| Issue Date: | 16-May-2016 |
| Abstract: | 本發明提供一種高電子遷移率電晶體，以閘極掘入結構搭配高介電常數氧化層以及氮化物介面鈍化層，具有高臨界電壓、高轉導、高穩定之汲極輸出電流以及高可靠度等特性及優點。 |
| Gov't Doc #: | H01L029/778 H01L021/28 |
| URI: | http://hdl.handle.net/11536/132275 |
| Patent Country: | TWN |
| Patent Number: | 201618304 |
| Appears in Collections: | Patents |
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