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dc.contributor.authorYang, HPDen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorLai, FIen_US
dc.contributor.authorYu, HCen_US
dc.contributor.authorHsu, YJen_US
dc.contributor.authorLin, Gen_US
dc.contributor.authorHsiao, RSen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorChi, JYen_US
dc.date.accessioned2014-12-08T15:18:22Z-
dc.date.available2014-12-08T15:18:22Z-
dc.date.issued2005-09-29en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20052518en_US
dc.identifier.urihttp://hdl.handle.net/11536/13251-
dc.description.abstractAn InAs quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fibre-optic applications is first demonstrated. Single fundamental mode CW output power of 0.2 mW has been achieved in the 1300 nm range, with a threshold current of 4.75 mA. Side-mode suppression ratio larger than 40 dB has been observed over the entire thermally limited operation range.en_US
dc.language.isoen_USen_US
dc.titleSinglemode InAs quantum dot photonic crystal VCSELsen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20052518en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume41en_US
dc.citation.issue20en_US
dc.citation.spage1130en_US
dc.citation.epage1132en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000232874400028-
dc.citation.woscount18-
Appears in Collections:Articles


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