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dc.contributor.authorChen, SCen_US
dc.contributor.authorLou, JCen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorChang, TCen_US
dc.date.accessioned2014-12-08T15:18:22Z-
dc.date.available2014-12-08T15:18:22Z-
dc.date.issued2005-09-22en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2005.01.023en_US
dc.identifier.urihttp://hdl.handle.net/11536/13253-
dc.description.abstractIn this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH3 surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric, leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO2 thin film was dominated by Frenkel-Poole emission in a high electric field. (c) 2005 Elsevier B.V All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectdielectricsen_US
dc.subjectelectrical properties and measurementsen_US
dc.subjectsurface and interface stateen_US
dc.subjecttransmission electron microscopy (TEM)en_US
dc.titleAn interfacial investigation of high-dielectric constant material hafnium oxide on Si substrateen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2005.01.023en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume488en_US
dc.citation.issue1-2en_US
dc.citation.spage167en_US
dc.citation.epage172en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000231435300026-
Appears in Collections:Conferences Paper


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