標題: The impact of electrical contacts and contact-induced ultralow noise amplitudes in layered transistors
作者: Hsu, Chih-Kai
Lin, Chi-Yi
Li, Wenwu
Sun, Huabin
Xu, Yong
Hu, Zhigao
Chang, Yuan-Ming
Suen, Yuen-Wuu
Lin, Yen-Fu
電子物理學系
Department of Electrophysics
關鍵字: layered electronics;PbSnS2;electrical contacts;low-frequency noise;noise amplitude
公開日期: Dec-2016
摘要: Electrical contacts made of conducting channels with external circuitry significantly impact electronic performances, in particular for two-dimensional semiconductors. This work presents a systematic study of back-to-back Schottky contacts to a layered compound of semiconducting flakes through static and dynamic electrical measurements and the first demonstration of Schottky barrier-dominated, p-type PbSnS2 field-effect transistors. In the static analysis, the Schottky barrier height of the layered transistors can be modulated by applied electrostatic fields, while the contact-dominated fluctuations render to the 1/f electric noise and induce a normalized noise amplitude in the order of 10(-9)-10(-8). Such an ultralow-noise amplitude, which is never observed in other layered semiconducting transistors, is ascribed to the existence of Schottky barriers. Our experimental results provide a nuanced perspective for advancing the understanding of performance limit with increasing numbers of layers for electronic development.
URI: http://dx.doi.org/10.1088/2053-1583/3/4/045015
http://hdl.handle.net/11536/132596
ISSN: 2053-1583
DOI: 10.1088/2053-1583/3/4/045015
期刊: 2D MATERIALS
Volume: 3
Issue: 4
Appears in Collections:Articles