標題: The Performance Improvement of N-2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel
作者: Wu, Chien-Hung
Huang, Bo-Wen
Chang, Kow-Ming
Wang, Shui-Jinn
Lin, Jian-Hong
Hsu, Jui-Mei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: N-2 Plasma Treatment;AP-PECVD;IGZO TFTs
公開日期: Jun-2016
摘要: The aim of this paper is to illustrate the N-2 plasma treatment for high-kappa ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N-2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N-2 plasma treatment with field-effect mobility (mu(FET)) of 22.5 cm(2)/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I-on/I-off) of 1.49x10(7).
URI: http://dx.doi.org/10.1166/jnn.2016.12612
http://hdl.handle.net/11536/132698
ISSN: 1533-4880
DOI: 10.1166/jnn.2016.12612
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 16
Issue: 6
起始頁: 6044
結束頁: 6048
Appears in Collections:Articles