A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications

Abstract

A 60-nm-thick E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor (HEMT) was successfully fabricated and evaluated by using Au/Pt/Ti-based non-annealed ohmic technology for high-speed and low-power logic applications. The device exhibited a minimal SS of 69mV/decade, a lower DIBL of 30mV/V, an ION/IOFF ratio above 1.2 x 10(4) at V-DS = 0.5V and a high f(T) of 378GHz and f(max) of 214GHz at V-DS = 1.0V. These results demonstrate that non-annealed ohmic contacts can be used for fabricating E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs with excellent electrical characteristics. The fabricated HEMTs are likely to find use in future high-speed and low-power logic applications. (C) 2016 The Japan Society of Applied Physics.