Gate Insulator Morphology-Dependent Reliability in Organic Thin-Film Transistors

Abstract

In this letter, we investigated the gate insulator morphology affecting on the electric characteristic variation for organic thin-film transistors (OTFTs). From the transfer characteristics, there is a result with leakage current when the gate voltage is lower than the threshold voltage, which is due to the gate insulator thickness variation. Furthermore, regardless of whether the OTFT is operated under positive or negative bias stress, the more severe degradation happened in the hump region of transfer characteristics. Because a thinner gate insulator causes a high electric field, more charges are trapped in a gate dielectric stack.