標題: Gate Insulator Morphology-Dependent Reliability in Organic Thin-Film Transistors
作者: Chen, Hua-Mao
Chang, Ting-Chang
Tai, Ya-Hsiang
Chiang, Hsiao-Cheng
Liu, Kuan-Hsien
Chen, Min-Chen
Huang, Cheng-Chieh
Lee, Chao-Kuei
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: OTFT;reliability;morphology
公開日期: Feb-2016
摘要: In this letter, we investigated the gate insulator morphology affecting on the electric characteristic variation for organic thin-film transistors (OTFTs). From the transfer characteristics, there is a result with leakage current when the gate voltage is lower than the threshold voltage, which is due to the gate insulator thickness variation. Furthermore, regardless of whether the OTFT is operated under positive or negative bias stress, the more severe degradation happened in the hump region of transfer characteristics. Because a thinner gate insulator causes a high electric field, more charges are trapped in a gate dielectric stack.
URI: http://dx.doi.org/10.1109/LED.2015.2508760
http://hdl.handle.net/11536/132897
ISSN: 0741-3106
DOI: 10.1109/LED.2015.2508760
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 37
Issue: 2
起始頁: 228
結束頁: 230
Appears in Collections:Articles