標題: | Transport of Electrons on Liquid Helium in a Microchannel Device near the Current Threshold |
作者: | Beysengulov, N. R. Rees, D. G. Tayurskii, D. A. Kono, K. 物理研究所 Institute of Physics |
公開日期: | 九月-2016 |
摘要: | We study the transport of strongly interacting electrons on the surface of liquid helium confined in a microchannel geometry, near the current threshold point. The current threshold depends on the electrostatic confinement, created by the microchannel electrodes, and on the electrostatic potential of electron system. Depending on the geometry of the microchannel, the current pinch-off can occur at the center or move to the edges of the microchannel, as confirmed by Finite Element Model calculations. The confining potential dependence of electron conductivity above the current threshold point is consistent with a classical charge continuum model. However, we find that below the threshold point electron transport is suppressed due to charging energy effects. |
URI: | http://dx.doi.org/10.1134/S002136401617001X http://hdl.handle.net/11536/132900 |
ISSN: | 0021-3640 |
DOI: | 10.1134/S002136401617001X |
期刊: | JETP LETTERS |
Volume: | 104 |
Issue: | 5 |
起始頁: | 323 |
結束頁: | 328 |
顯示於類別: | 期刊論文 |