Full metadata record
DC FieldValueLanguage
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChang, Chih-Hsiangen_US
dc.contributor.authorFuh, Chur-Shyangen_US
dc.date.accessioned2019-04-03T06:37:00Z-
dc.date.available2019-04-03T06:37:00Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c6ra22423gen_US
dc.identifier.urihttp://hdl.handle.net/11536/132906-
dc.description.abstractWe studied the influence of the backchannel passivation layer (BPL) on the ambient stability of amorphous indium-zinc-tin-oxide thin-film transistors (a-IZTO TFTs), in which atomic layer deposited (ALD) Al2O3 films and plasma-enhanced chemical vapor deposited (PECVD) SiO2 films were separately used to be the channel passivation layers. It was observed that the BPL deposition process strongly affects device performance and stability. From the results of the extracted activation energy (Eact), the Al2O3 passivation layer can reduce the trap density in localized tail states, which improves the mobility of a-IZTO TFTs. Compared with the SiO2 passivation layer, the Al2O3 passivation process effectively suppresses H injection into the a-IZTO channel layer underneath with secondary ion mass spectrometer analysis. In addition, it is found that the a-IZTO TFT with the Al2O3 passivation layer can enhance resistance against negative bias illumination stress (NBIS), making it reliable for realistic operation in flat panel displays.en_US
dc.language.isoen_USen_US
dc.titleEnhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c6ra22423gen_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume6en_US
dc.citation.issue108en_US
dc.citation.spage106374en_US
dc.citation.epage106379en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000389330700040en_US
dc.citation.woscount6en_US
Appears in Collections:Articles


Files in This Item:

  1. d590b62fb6f1c7c25c5b1bb1ed5015b4.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.