標題: | Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma |
作者: | Cheng, Chia-Chin Lu, Ang-Yu Tseng, Chien-Chih Yang, Xiulin Hedhili, Mohamed Nejib Chen, Min-Cheng Wei, Kung-Hwa Li, Lain-Jong 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | Hydrogen evolution reaction;MoS2;Electrolysis;Catalysis;Transition metal dichalcogenides |
公開日期: | 十二月-2016 |
摘要: | Two-dimensional layered transition metal dichalcogenide (TMD) materials such as Molybdenum disufide (MoS2) have been recognized as one of the low-cost and efficient electrocatalysts for hydrogen evolution reaction (HER). The crystal edges that account for a small percentage of the surface area, rather than the basal planes, of MoS2 monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS2 for enhancing their HER activity. Here, we report a simple and efficient approach using a remote hydrogen-plasma process to creating S-vacancies on the basal plane of monolayer crystalline MoS2; this process can generate high density of S-vacancies while mainly maintaining the morphology and structure of MoS2 monolayer. The density of S-vacancies (defects) on MoS2 monolayers resulted from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced in the results of our spectroscopic and electrical measurements. The H-2-plasma treated MoS2 also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. (C) 2016 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.nanoen.2016.09.010 http://hdl.handle.net/11536/132988 |
ISSN: | 2211-2855 |
DOI: | 10.1016/j.nanoen.2016.09.010 |
期刊: | NANO ENERGY |
Volume: | 30 |
起始頁: | 846 |
結束頁: | 852 |
顯示於類別: | 期刊論文 |