Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

Abstract

In this work, we report on electrically pumped III-N microcavity (MC) light emitters incorporating oxide confinement apertures. The utilized SiO2 aperture can provide a planar ITO design with a higher index contrast (similar to 1) over other previously reported approaches. The fabricated MC light emitter with a 15-mu m-aperture shows a turn-on voltage of 3.3 V, which is comparable to conventional light emitting diodes (LEDs), showing a good electrical property of the proposed structure. A uniform light output profile within the emission aperture suggesting the good capability of current spreading and current confinement of ITO and SiO2 aperture, respectively. Although the quality factor (Q) of fabricated MC is not high enough to achieve lasing action (similar to 500), a superlinear emission can still be reached under a high current injection density (2.83 kA/cm(2)) at 77 K through the exciton-exciton scattering, indicating the high potential of this structure for realizing excitonic vertical-cavity surface-emitting laser (VCSEL) action or even polariton laser after fabrication optimization.