標題: Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography
作者: Wang, Sheng-Wen
Hong, Kuo-Bin
Tsai, Yu-Lin
Teng, Chu-Hsiang
Tzou, An-Jye
Chu, You-Chen
Lee, Po-Tsung
Ku, Pei-Cheng
Lin, Chien-Chung
Kuo, Hao-Chung
光電系統研究所
光電工程學系
光電工程研究所
Institute of Photonic System
Department of Photonics
Institute of EO Enginerring
公開日期: 3-Mar-2017
摘要: In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside the active region. Photoluminescence (PL) and time-resolved PL measurements indicated the lattice-mismatch induced strain inside the active region was relaxed when the wall width is reduced. Through the simulation, we can understand the strain distribution of active region inside NRLEDs. The simulation results not only revealed the exact distribution of strain but also predicted the trend of wavelength-shifted behavior of NRLEDs. Finally, the NRLEDs devices with four-color emission on the same wafer were demonstrated.
URI: http://dx.doi.org/10.1038/srep42962
http://hdl.handle.net/11536/133139
ISSN: 2045-2322
DOI: 10.1038/srep42962
期刊: SCIENTIFIC REPORTS
Volume: 7
起始頁: 0
結束頁: 0
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