標題: | Performance Enhancements in p-Type Al-Doped Tin-Oxide Thin Film Transistors by Using Fluorine Plasma Treatment |
作者: | Chen, Po-Chun Chiu, Yu-Chien Liou, Guan-Lin Zheng, Zhi-Wei Cheng, Chun-Hu Wu, Yung-Hsien 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Al-doped SnO;fluorine plasma;TFT |
公開日期: | Feb-2017 |
摘要: | This letter reports on a tin oxide (SnO) thin-film transistor (TFT) with p-type conduction that uses aluminum (Al) doping in the SnO active channel layer. Performance enhancements were further achieved by applying fluorine plasma treatment on the p-type Al-dopedSnO channel layer. The effects of the fluorine plasma treatment were also investigated. By tuning the power of the fluorine plasma treatment on the p-type Al-doped SnO channel layer, the optimal TFT device showed a very high on/off current ratio of 2.58x10(6) and a low threshold swing of 174 mV/decade, which could be attributed to the passivation effect of the plasma fluorination on the dominant donor-like traps at the SnO/HfO2 interface, as reflected by the suppression of the hysteresis phenomenon, the low density of interface traps, and the small subthreshold swing. The results indicate that the p-type Al-doped SnO TFT device with fluorine plasma treatment has considerable potential for application in future high-performance displays. |
URI: | http://dx.doi.org/10.1109/LED.2016.2646378 http://hdl.handle.net/11536/133172 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2016.2646378 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 38 |
Issue: | 2 |
起始頁: | 210 |
結束頁: | 212 |
Appears in Collections: | Articles |