標題: Resistance Switching Characteristics Induced by O-2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory
作者: Chen, Po-Hsun
Chang, Ting-Chang
Chang, Kuan-Chang
Tsai, Tsung-Ming
Pan, Chih-Hung
Chen, Min-Chen
Su, Yu-Ting
Lin, Chih-Yang
Tseng, Yi-Ting
Huang, Hui-Chun
Wu, Huaqiang
Deng, Ning
Qian, He
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: resistive random access memory (RRAM);indium tin oxide (ITO);inductively coupled plasma (ICP);oxygen gas (O-2);insulator;self-compliance current
公開日期: 25-Jan-2017
摘要: In this study, an O-2 inductively coupled plasma (ICP) treatment was developed in order to modify the characteristics of indium tin oxide (ITO) film for use as an insulator in resistive random access memory (RRAM). After the O-2 plasma treatment, the previously conductive ITO film is oxidized and becomes less conductive. In addition, after capping the same ITO material for use as a top electrode, we found that the ITO/ITO (O-2 plasma)/TiN device exhibits very stable and robust resistive switching characteristics. On the contrary, the nontreated ITO film for use as an insulator in the ITO/ ITO/TiN device cannot perform resistance switching behaviors. The material analysis initially investigated the ITO film characteristics with and without O-2 plasma treatment. The surface was less rough after O-2 plasma treatment. However, the molar concentration of each element and measured sheet resistance results for the O-2-plasma-treated ITO film were dramatically modified. Next, electrical measurements were carried out to examine the resistance switching stability under continuous DC and AC operation in this ITO/ITO(O-2 plasma)/TiN device. Reliability tests, including endurance and retention, also proved its capability for use in data storage applications. In addition to these electrical measurements, current fitting method experiments at different temperatures were performed to examine and confirm the resistance switching mechanisms. This easily fabricated device, using a simple material combination, achieves excellent performance by using ITO with an O-2 plasma treatment and can further the abilities of RRAM for use in remarkable potential applications.
URI: http://dx.doi.org/10.1021/acsami.6b14282
http://hdl.handle.net/11536/133205
ISSN: 1944-8244
DOI: 10.1021/acsami.6b14282
期刊: ACS APPLIED MATERIALS & INTERFACES
Volume: 9
Issue: 3
起始頁: 3149
結束頁: 3155
Appears in Collections:Articles