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dc.contributor.authorKhwa, Win-Sanen_US
dc.contributor.authorChang, Meng-Fanen_US
dc.contributor.authorWu, Jau-Yien_US
dc.contributor.authorLee, Ming-Hsiuen_US
dc.contributor.authorSu, Tzu-Hsiangen_US
dc.contributor.authorYang, Keng-Haoen_US
dc.contributor.authorChen, Tien-Fuen_US
dc.contributor.authorWang, Tien-Yenen_US
dc.contributor.authorLi, Hsiang-Pangen_US
dc.contributor.authorBrightsky, Matthewen_US
dc.contributor.authorKim, Sangbumen_US
dc.contributor.authorLung, Hsiang-Lanen_US
dc.contributor.authorLam, Chungen_US
dc.date.accessioned2017-04-21T06:56:07Z-
dc.date.available2017-04-21T06:56:07Z-
dc.date.issued2017-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2016.2597822en_US
dc.identifier.urihttp://hdl.handle.net/11536/133231-
dc.description.abstractFor multilevel cell (MLC) phase change memory (PCM), resistance drift ( R-drift) phenomenon causes cell resistance to increase with time, even at room temperature. As a result, the fixed-threshold-retention (FTR) raw-bit-error-rate (RBER) surpasses practical ECC correction ability within hours after being programmed. This study proposes a resistance drift compensation (RDC) scheme to mitigate R-drift issue. The proposed RDC scheme realizes PCM drift compensation and features RDC pulse to suppress ECC decoding failure. The proposed approach was validated using a 90-nm 128M cells PCM chip and an FPGA-based memory controller verification system. The MLC PCM FTR RBER has been suppressed by over 100x, thereby bringing it within ECC capability. The effectiveness of the RDC scheme was verified up to 106 cycles.en_US
dc.language.isoen_USen_US
dc.subjectMLCen_US
dc.subjectmultilevel cellen_US
dc.subjectPCMen_US
dc.subjectPCRAMen_US
dc.subjectresistance driften_US
dc.subjectwrite driveren_US
dc.titleA Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage Class Memory Applicationsen_US
dc.identifier.doi10.1109/JSSC.2016.2597822en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume52en_US
dc.citation.issue1en_US
dc.citation.spage218en_US
dc.citation.epage228en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000395641800019en_US
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