A Resistance-Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage-Class Memory Applications

標題:	A Resistance-Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage-Class Memory Applications
作者:	Khwa, Win-San Chang, Meng-Fan Wu, Jau-Yi Lee, Ming-Hsiu Su, Tzu-Hsiang Yang, Keng-Hao Chen, Tien-Fu Wang, Tien-Yen Li, Hsiang-Pang BrightSky, Matthew Kim, SangBum Lung, Hsiang-Lam Lam, Chung 交大名義發表 National Chiao Tung University
公開日期:	2016
URI:	http://hdl.handle.net/11536/136197
ISBN:	978-1-4673-9467-3
ISSN:	0193-6530
期刊:	2016 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)
Volume:	59
起始頁:	134
結束頁:	U179
顯示於類別：	會議論文