標題: A Resistance-Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage-Class Memory Applications
作者: Khwa, Win-San
Chang, Meng-Fan
Wu, Jau-Yi
Lee, Ming-Hsiu
Su, Tzu-Hsiang
Yang, Keng-Hao
Chen, Tien-Fu
Wang, Tien-Yen
Li, Hsiang-Pang
BrightSky, Matthew
Kim, SangBum
Lung, Hsiang-Lam
Lam, Chung
交大名義發表
National Chiao Tung University
公開日期: 2016
URI: http://hdl.handle.net/11536/136197
ISBN: 978-1-4673-9467-3
ISSN: 0193-6530
期刊: 2016 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)
Volume: 59
起始頁: 134
結束頁: U179
顯示於類別:會議論文