| 標題: | AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016) |
| 作者: | Lin, Yen-Ku Noda, Shuichi Lo, Hsiao-Chieh Liu, Shih-Chien Wu, Chia-Hsun Wong, Yuen-Yee Luc, Quang Ho Chang, Po-Chun Hsu, Heng-Tung Samukawa, Seiji Chang, Edward Yi 材料科學與工程學系 光電系統研究所 電子工程學系及電子研究所 國際半導體學院 Department of Materials Science and Engineering Institute of Photonic System Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology |
| 公開日期: | 一月-2017 |
| URI: | http://dx.doi.org/10.1109/LED.2016.2634606 http://hdl.handle.net/11536/133312 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/LED.2016.2634606 |
| 期刊: | IEEE ELECTRON DEVICE LETTERS |
| Volume: | 38 |
| Issue: | 1 |
| 起始頁: | 149 |
| 結束頁: | 149 |
| 顯示於類別： | 期刊論文 |
- AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016) / Lin, Yen-Ku;Noda, Shuichi;Lo, Hsiao-Chieh;Liu, Shih-Chien;Wu, Chia-Hsun
- AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications / Lin, Yen-Ku;Noda, Shuichi;Lo, Hsiao-Chieh;Liu, Shih-Chien;Wu, Chia-Hsun
- 利用中性粒子束蝕刻製作掘入式閘極增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體於高頻高功率上的應用 / 黃嘉慶;張翼;馬哲申;Huang, Chia-Ching;Chang, Edward Yi
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