標題: Monolithic 3D CMOS Using Layered Semiconductors
作者: Sachid, Angada B.
Tosun, Mahmut
Desai, Sujay B.
Hsu, Ching-Yi
Lien, Der-Hsien
Madhvapathy, Surabhi R.
Chen, Yu-Ze
Hettick, Mark
Kang, Jeong Seuk
Zeng, Yuping
He, Jr-Hau
Chang, Edward Yi
Chueh, Yu-Lun
Javey, Ali
Hu, Chenming
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 6-Apr-2016
摘要: Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.
URI: http://dx.doi.org/10.1002/adma.201505113
http://hdl.handle.net/11536/133422
ISSN: 0935-9648
DOI: 10.1002/adma.201505113
期刊: ADVANCED MATERIALS
Volume: 28
Issue: 13
起始頁: 2547
結束頁: +
Appears in Collections:Articles