標題: | Monolithic 3D CMOS Using Layered Semiconductors |
作者: | Sachid, Angada B. Tosun, Mahmut Desai, Sujay B. Hsu, Ching-Yi Lien, Der-Hsien Madhvapathy, Surabhi R. Chen, Yu-Ze Hettick, Mark Kang, Jeong Seuk Zeng, Yuping He, Jr-Hau Chang, Edward Yi Chueh, Yu-Lun Javey, Ali Hu, Chenming 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 6-Apr-2016 |
摘要: | Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications. |
URI: | http://dx.doi.org/10.1002/adma.201505113 http://hdl.handle.net/11536/133422 |
ISSN: | 0935-9648 |
DOI: | 10.1002/adma.201505113 |
期刊: | ADVANCED MATERIALS |
Volume: | 28 |
Issue: | 13 |
起始頁: | 2547 |
結束頁: | + |
Appears in Collections: | Articles |