標題: Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors
作者: Zou, Xuming
Huang, Chun-Wei
Wang, Lifeng
Yin, Long-Jing
Li, Wenqing
Wang, Jingli
Wu, Bin
Liu, Yunqi
Yao, Qian
Jiang, Changzhong
Wu, Wen-Wei
He, Lin
Chen, Shanshan
Ho, Johnny C.
Liao, Lei
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 9-Mar-2016
摘要: A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-kappa HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance.
URI: http://dx.doi.org/10.1002/adma.201505205
http://hdl.handle.net/11536/133479
ISSN: 0935-9648
DOI: 10.1002/adma.201505205
期刊: ADVANCED MATERIALS
Volume: 28
Issue: 10
起始頁: 2062
結束頁: +
Appears in Collections:Articles