標題: | Wide Range pH-Tolerable Silicon@Pyrite Cobalt Dichalcogenide Microwire Array Photoelectrodes for Solar Hydrogen Evolution |
作者: | Chen, Chihjung Yang, Kai-Chih Basu, Mrinmoyee Lu, Tzu-Hsiang Lu, Ying-Rui Dong, Chung-Li Hu, Shu-Fen Liu, Ru-Shi 加速器光源科技與應用學位學程 Master and Ph.D. Program for Science and Technology of Accelrrator Light Source |
關鍵字: | cobalt dichalcogenide;silicon microwire arrays;wide range pH toleration;hydrogen evolution;solar water splitting;co-catalyst |
公開日期: | 2-三月-2016 |
摘要: | This study employed silicon@cobalt dichalcogenide micro wires (MWs) as wide range pH-tolerable photocathode material for solar water splitting. Silicon microwire arrays were fabricated through lithography and dry etching technologies. Si@Co(OH)(2) MWs were utilized as precursors to synthesize Si@CoX2 (X = S or Se) photocathodes. Si@CoS2 and Si@CoSe2 MWs were subsequently prepared by thermal sulfidation and hydrothermal selenization reaction of Si@Co(OH)(2), respectively. The CoX2 outer shell served as cocatalyst to accelerate the kinetics of photogenerated electrons from the underlying Si MWs and reduce the recombination. Moreover, the CoX2 layer completely deposited on the Si surface functioned as a passivation layer by decreasing the oxide formation on Si MWs during solar hydrogen evolution. Si@CoS2 photocathode showed a photocurrent density of -3.22 mA cm(-2) at 0 V (vs RHE) in 0.5 M sulfuric acid electrolyte, and Si@CoSe2 MWs revealed moderate photocurrent density of -2.55 mA cm(-2). However, Si@CoSe2 presented high charge transfer efficiency in neutral and alkaline electrolytes. Continuous chronoamperometry in acid, neutral, and alkaline solutions was conducted at 0 V (vs RHE) to evaluate the photoelectrochemical durability of Si@CoX2 MWs. Si@CoS2 electrode showed no photoresponse after the chronoamperometry test because it was etched through the electrolyte. By contrast, the photocurrent density of Si@CoSe2 MWs gradually increased to -5 mA cm(-2) after chronoamperometry characterization owing to the amorphous structure generation. |
URI: | http://dx.doi.org/10.1021/acsami.6b00027 http://hdl.handle.net/11536/133486 |
ISSN: | 1944-8244 |
DOI: | 10.1021/acsami.6b00027 |
期刊: | ACS APPLIED MATERIALS & INTERFACES |
Volume: | 8 |
Issue: | 8 |
起始頁: | 5400 |
結束頁: | 5407 |
顯示於類別: | 期刊論文 |