標題: Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation
作者: Luo, Shi
Eisler, Carissa
Wong, Tsun-Hsin
Xiao, Hai
Lin, Chuan-En
Wu, Tsung-Ta
Shen, Chang-Hong
Shieh, Jia-Min
Tsai, Chuan-Chuang
Liu, Chee-Wee
Atwater, Harry A.
Goddard, William A., III
Lee, Jiun-Haw
Greer, Julia R.
光電工程學系
Department of Photonics
關鍵字: CuInSe2 (CIS) solar cells;Thin film passivation;Na diffusion;DFT calculations;STEM-EDS
公開日期: 三月-2016
摘要: CuInSe2 (CIS) solar cells are promising candidates for thin film photovoltaic applications, one key limitation in their performance is surface recombination in these thin films. We demonstrate that passivating CIS films with Trioctylphosphine Sulfide (TOP:S) solution increases photoluminescence (PL) intensity by a factor of similar to 30, which suggests that this passivation significantly reduces surface recombination. X-ray photoelectron spectroscopy (XPS) reveals that TOP:S forms both -S and -P bonds on the CIS film surface, which leads to a similar to 4-fold increase in the surface Na peak intensity. This value is significantly higher than what would be expected from high temperature annealing alone, which has been linked to improvements in surface morphology and device efficiency in CIGS solar cells. We use Energy Dispersive X-ray Spectroscopy (EDS) to measure the solid-state transport of Na within CIS films with and without passivation. EDS spectra on CIS film cross-sections reveals a saddle-shaped Na profile in the as fabricated films and a concentration gradient towards the film surface in the passivated films, with 20% higher surface Na content compared with the unpassivated films. We employ Hybrid (B3PW91) Density Functional Theory (DFT) to gain insight into energetics of Na defects, which demonstrate a driving force for Na diffusion from bulk towards the surface. DFT Calculations with TOP:S-like molecules on the same surfaces reveal a similar to 1eV lower formation energy for the Na-cu defect. The experiments and computations in this work suggest that TOP:S passivation promotes Na diffusion towards CIS film surfaces and stabilizes surface Na defects, which leads to the observed substantial decrease in surface recombination. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.actamat.2016.01.021
http://hdl.handle.net/11536/133520
ISSN: 1359-6454
DOI: 10.1016/j.actamat.2016.01.021
期刊: ACTA MATERIALIA
Volume: 106
起始頁: 171
結束頁: 181
顯示於類別:期刊論文