Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Phuoc Huu Le | en_US |
dc.contributor.author | Chiu, Shao-Pin | en_US |
dc.contributor.author | Jian, Sheng-Rui | en_US |
dc.contributor.author | Luo, Chih Wei | en_US |
dc.contributor.author | Lin, Jiunn-Yuan | en_US |
dc.contributor.author | Lin, Juhn-Jong | en_US |
dc.contributor.author | Wu, Kaung Hsiung | en_US |
dc.contributor.author | Gospodinov, M. | en_US |
dc.date.accessioned | 2017-04-21T06:55:53Z | - |
dc.date.available | 2017-04-21T06:55:53Z | - |
dc.date.issued | 2016-09-15 | en_US |
dc.identifier.issn | 0925-8388 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.jallcom.2016.03.226 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/133708 | - |
dc.description.abstract | New ternary phase of Bi3Se2Te thin films were successfully grown through pulsed laser deposition with a single Bi2Se2Te crystal as the target. Bi-rich and Se-and Te-deficient compositions deposited at a substrate temperature (T-s) of 250 degrees C and helium gas pressures (P-He) ranging from 2.0 x 10(-5) to 6.5 x 10(-1) Torr aided the formation of the dominant Bi-rich phase: Bi3Se2Te. The films were grown epitaxially on Al2O3 (001) substrates with Bi3Se2Te [001]//Al2O3 [001] and Bi3Se2Te [110]//Al2O3 [210]. An increase in P-He remarkably enhanced the hardness and Young\'s modulus of the films, primarily because of the decrease in nanograin size, following the HallePetch relationship. Moreover, the Bi3Se2Te films present linear magnetoresistance under a high perpendicular magnetic field (B >= 4 T) and twodimensional weak antilocalization effect under a low B (+/- 1 T) which may be attributed to topological insulator surface state (TSS). Clearly, further theoretical calculations and experiments are needed to confirm the suggested interpretation. (C) 2016 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Topological insulator | en_US |
dc.subject | Bi3Se2Te | en_US |
dc.subject | Nanoindentation | en_US |
dc.subject | Weak antilocalization (WAL) | en_US |
dc.subject | Pulsed laser deposition (PLD) | en_US |
dc.title | Nanomechanical, structural, and transport properties of Bi3Se2Te thin films | en_US |
dc.identifier.doi | 10.1016/j.jallcom.2016.03.226 | en_US |
dc.identifier.journal | JOURNAL OF ALLOYS AND COMPOUNDS | en_US |
dc.citation.volume | 679 | en_US |
dc.citation.spage | 350 | en_US |
dc.citation.epage | 357 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000376104900047 | en_US |
Appears in Collections: | Articles |