標題: Nanomechanical, structural, and transport properties of Bi3Se2Te thin films
作者: Phuoc Huu Le
Chiu, Shao-Pin
Jian, Sheng-Rui
Luo, Chih Wei
Lin, Jiunn-Yuan
Lin, Juhn-Jong
Wu, Kaung Hsiung
Gospodinov, M.
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
關鍵字: Topological insulator;Bi3Se2Te;Nanoindentation;Weak antilocalization (WAL);Pulsed laser deposition (PLD)
公開日期: 15-Sep-2016
摘要: New ternary phase of Bi3Se2Te thin films were successfully grown through pulsed laser deposition with a single Bi2Se2Te crystal as the target. Bi-rich and Se-and Te-deficient compositions deposited at a substrate temperature (T-s) of 250 degrees C and helium gas pressures (P-He) ranging from 2.0 x 10(-5) to 6.5 x 10(-1) Torr aided the formation of the dominant Bi-rich phase: Bi3Se2Te. The films were grown epitaxially on Al2O3 (001) substrates with Bi3Se2Te [001]//Al2O3 [001] and Bi3Se2Te [110]//Al2O3 [210]. An increase in P-He remarkably enhanced the hardness and Young\'s modulus of the films, primarily because of the decrease in nanograin size, following the HallePetch relationship. Moreover, the Bi3Se2Te films present linear magnetoresistance under a high perpendicular magnetic field (B >= 4 T) and twodimensional weak antilocalization effect under a low B (+/- 1 T) which may be attributed to topological insulator surface state (TSS). Clearly, further theoretical calculations and experiments are needed to confirm the suggested interpretation. (C) 2016 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jallcom.2016.03.226
http://hdl.handle.net/11536/133708
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2016.03.226
期刊: JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 679
起始頁: 350
結束頁: 357
Appears in Collections:Articles