標題: Light Emission Characteristics of Nonpolar a-Plane GaN-Based Photonic Crystal Defect Cavities
作者: Kao, Tsung Sheng
Wu, Tzeng-Tsong
Tsao, Che-Wei
Lin, Jyun-Hao
Lin, Da-Wei
Huang, Shyh-Jer
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
Su, Yan-Kuin
光電工程學系
Department of Photonics
關鍵字: Gallium nitride;nonpolar;photonic crystal;defect cavity;photoluminescence
公開日期: Sep-2016
摘要: In this paper, the light emission performance from nonpolar a-plane gallium nitride (GaN)-based photonic crystal (PC) slabs with line-type defect cavities has been investigated. Via the focused ion beam milling technique, thin membrane structures of the nonpolar GaN PC defect cavities were engineered, exhibiting one dominated resonant mode occurred at 419.3 nm with a high quality factor of 1.9 x 10(3) in the photoluminescence emission characterizations. In the far-field region, light emission performance shows a high polarization degree of 50% with the beam direction perpendicular to the defect cavity. Compared with the PC defect cavity patterns fabricated on c-axial oriented GaN materials, the a-plane PC defect cavities display not only the linear light output-input power dependence, but also an invariant resonant mode of constant light emission behavior with increasing the injection carriers, therefore providing a new perspective for the future development of promising optoelectronic devices.
URI: http://dx.doi.org/10.1109/JQE.2016.2587104
http://hdl.handle.net/11536/134076
ISSN: 0018-9197
DOI: 10.1109/JQE.2016.2587104
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 52
Issue: 9
Appears in Collections:Articles