標題: Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
作者: Quang Ho Luc
Cheng, Shou Po
Chang, Po Chun
Huy Binh Do
Chen, Jin Han
Minh Thien Huu Ha
Sa Hoang Huynh
Hu, Chenming Calvin
Lin, Yueh Chin
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOSFET;MOSCAP;AlN;In0.53Ga0.47As;plasma-enhanced atomic layer deposition;remote-plasma treatment
公開日期: Aug-2016
摘要: In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for device passivation to realize a high-performance inversion-mode HfO2/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET). Excellent quality of gate dielectric is enabled by utilizing the PEALD-aluminum nitride as a pre-gate interfacial layer, followed by a post-gate remote-plasma gas treatment. In-situ PEALD treatment led to enhanced dc characteristics, such as drain current, peak transconductance, subthreshold swing, OFF leakage current, and effective electron mobility. X-ray photoelectron spectroscopy analysis indicates a reduction of In-and Ga-related signals. Furthermore, small drain current hysteresis and low-interface state density (D-it) value confirm a high interfacial quality for the high-k/III-V structure. Overall, the PEALD passivation for HfO2/In0.53Ga0.47As interface shows a remarkable improvement on the MOSFET performance.
URI: http://dx.doi.org/10.1109/LED.2016.2581175
http://hdl.handle.net/11536/134117
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2581175
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 37
Issue: 8
起始頁: 974
結束頁: 977
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