標題: | Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide |
作者: | Chen, Bo-Wei Chang, Ting-Chang Hung, Yu-Ju Huang, Shin-Ping Liao, Po-Yung Yang, Chung-Yi Chu, Ann-Kuo Wang, Terry Tai-Jui Chang, Tsu-Chiang Su, Bo-Yuan Kuo, Su-Chun Huang, I-Yu 電子物理學系 Department of Electrophysics |
關鍵字: | Flexible electronics;LTPS TFTs;hump;mechanical bending stress |
公開日期: | Aug-2016 |
摘要: | This letter investigates the effect of repeated uniaxial mechanical stress on bias-induced degradation behavior in polycrystalline thin-film transistors (TFTs). After 100 000 iterations of channel-width-direction mechanical compression, serious threshold voltage degradation and an abnormal hump are observed. Simulation indicates that the strongest mechanical stress occurs at both sides of the channel edge, between the polycrystalline silicon and gate insulator. Since these stress points produce oxide traps in the gate insulator, the degradation of threshold voltage shift and parasitic current path can be attributed to electron trapping at these intense mechanical stress points. In addition, the degradation becomes serious with diminishing TFT size. |
URI: | http://dx.doi.org/10.1109/LED.2016.2584138 http://hdl.handle.net/11536/134119 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2016.2584138 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 37 |
Issue: | 8 |
起始頁: | 1010 |
結束頁: | 1013 |
Appears in Collections: | Articles |