標題: Performance enhancement of III-V multi-junction solar cells using indium-tin-oxide electrodes
作者: Kao, Yu-Cheng
Ou, Sin-Liang
Wu, Fan-Lei
Horng, Ray-Hua
電機學院
電子工程學系及電子研究所
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: InGaP/GaAs dual-junction solar cells;ITO-finger;ITO-overcoated
公開日期: 1-Aug-2016
摘要: InGaP/GaAs dual-junction solar cells were prepared on p-type GaAs substrates by metalorganic chemical vapor deposition. Three types of front-side electrodes, which included AuGe/Au metal-finger, ITO-finger, and ITO-overcoated, were individually fabricated on the devices and denoted as samples A, B, and C, respectively. The thickness of ITO film is 200 nm, and its transmittance can reach 99% in the visible region. Based on the current density-voltage (J-V) measurement, the short-circuit current density (J(sc)) of samples A, B, and C are 8.13, 9.35, and 10.90 mA/cm(2), while the conversion efficiencies of these three samples are evaluated to be 15.45%, 18.14%, and 20.24%, respectively. This reveals that sample C possesses 31.0% enhancement in the conversion efficiency compared to that of sample A. Additionally, the series resistances (Rs) of samples A, B, and C are 21.43, 22.94, and 6.71 Omega-cm(2), respectively. The lowest Rs occurred in sample C can be attributed to the elimination of the lateral resistance between electrodes because this device was fabricated with the ITO-overcoated front-side electrode. In sample C, since the ITO front-side electrode can cover overall surface of the device, all regions on the sample surface can extract the electrons, leading to the highest J(sc). (C) 2016 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2016.05.045
http://hdl.handle.net/11536/134123
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2016.05.045
期刊: THIN SOLID FILMS
Volume: 612
起始頁: 36
結束頁: 40
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