標題: Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design
作者: Tsai, Szu-Ping
Hsu, Heng-Tung
Wuerfl, Joachim
Chang, Edward Yi
材料科學與工程學系
國際半導體學院
Department of Materials Science and Engineering
International College of Semiconductor Technology
關鍵字: AlGaN/GaN;flip-chip (FC) devices;high-electron-mobility transistors (HEMTs);strain engineering;thermo-mechanical analysis
公開日期: Oct-2016
摘要: The piezoelectric polarization of the AlGaN/GaN high-electron-mobility transistors (HEMTs) is strongly related to the strain state in the active area. Therefore, understanding the strain behavior inside the channel is crucial to the device electrical performance improvement of devices. This paper, for the first time, reveals the potential of optimizing flip-chip structures with active-region bumps to modulate the strain state of the AlGaN/GaN HEMT for enhancing the piezoelectric effect. The thermo-mechanical strain is observed to be affected by the physical dimensions and the material properties of the package. Thus, incorporating device strain engineering into packaging design will be very important for GaN devices due to their strong piezoelectric effects.
URI: http://dx.doi.org/10.1109/TED.2016.2594043
http://hdl.handle.net/11536/134197
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2594043
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
Issue: 10
起始頁: 3876
結束頁: 3881
Appears in Collections:Articles