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dc.contributor.authorPan, Chih-Hungen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorChu, Tian-Jianen_US
dc.contributor.authorChen, Po-Hsunen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2017-04-21T06:55:15Z-
dc.date.available2017-04-21T06:55:15Z-
dc.date.issued2016-10en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/10.7567/APEX.9.104201en_US
dc.identifier.urihttp://hdl.handle.net/11536/134210-
dc.description.abstractIn this study, an adjustable built-in resistor was observed on an indium-tin oxide (ITO)-capped resistance random access memory (RRAM) device, which has the potential to reduce operating power. Quite notably, the high-resistance state (HRS) current of the device decreased with decreasing current compliance, and a special situation, that is, a gradual change in current always appears and climbs slowly to reach the compliance current in the set process even when the compliance current decreases, was observed. Owing to this observed phenomenon, the device is regarded to be equipped with an adjustable built-in resistor, which has the potential for low-power device application. (C) 2016 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleAdjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memoryen_US
dc.identifier.doi10.7567/APEX.9.104201en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.citation.volume9en_US
dc.citation.issue10en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000384025200001en_US
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