標題: | Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment |
作者: | Hsiao, Chih-Jen Minh-Thien-Huu Ha Hsu, Ching-Yi Lin, Yueh-Chin Chang, Sheng-Po Chang, Shoou-Jinn Chang, Edward Yi 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | Sep-2016 |
摘要: | GaSb epitaxial layers were directly grown on GaAs substrates by metal-organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 degrees C, the strain induced by lattice mismatch was accommodated by 90 degrees dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties. (C) 2016 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/APEX.9.095502 http://hdl.handle.net/11536/134254 |
ISSN: | 1882-0778 |
DOI: | 10.7567/APEX.9.095502 |
期刊: | APPLIED PHYSICS EXPRESS |
Volume: | 9 |
Issue: | 9 |
Appears in Collections: | Articles |