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dc.contributor.authorWang, Tzu-Haoen_US
dc.contributor.authorLee, Hsuanen_US
dc.contributor.authorChen, Chih-Mingen_US
dc.contributor.authorChen, Ming-Guanen_US
dc.contributor.authorHu, Chi-Changen_US
dc.contributor.authorChen, Yu-Jieen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.date.accessioned2017-04-21T06:55:23Z-
dc.date.available2017-04-21T06:55:23Z-
dc.date.issued2016-08en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2016.06.012en_US
dc.identifier.urihttp://hdl.handle.net/11536/134281-
dc.description.abstractA Sn/Bi bilayer was deposited on a hot air solder leveling (HASL)-treated metal-core printed circuit board (MCPCB) using electroplating as a low-temperature die-bonding material for light-emitting diode (LED). The eutectic feature of the Sn/Bi contact enabled the die-bonding process to accomplish through a liquid/solid reaction at 185 degrees C with a proper compression force. A high-temperature die-bonding structure composed of a Bi layer sandwiched by two intermetallic compounds (IMCs) formed after thermocompression. Employment of the Sn/Bi bilayer for low-temperature die-bonding prevented the LEDs from thermal stress problems, and the resulting high-temperature IMC/Bi/IMC die-bonding structure was capable of withstanding multiple bonding reactions and high temperature/current operation environment. Durability tests including mechanical, thermal, and optical performance were systematically performed and compared with other commercially available die-bonding materials (Ag paste and solder alloys). (C) 2016 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMicrostructureen_US
dc.subjectThermalen_US
dc.subjectOpticalen_US
dc.subjectLow-temperatureen_US
dc.subjectDie-bondingen_US
dc.titleMicrostructural and thermal characterizations of light-emitting diode employing a low-temperature die-bonding materialen_US
dc.identifier.doi10.1016/j.microrel.2016.06.012en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume63en_US
dc.citation.spage68en_US
dc.citation.epage75en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000384776200011en_US
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