完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, Tzu-Hao | en_US |
dc.contributor.author | Lee, Hsuan | en_US |
dc.contributor.author | Chen, Chih-Ming | en_US |
dc.contributor.author | Chen, Ming-Guan | en_US |
dc.contributor.author | Hu, Chi-Chang | en_US |
dc.contributor.author | Chen, Yu-Jie | en_US |
dc.contributor.author | Horng, Ray-Hua | en_US |
dc.date.accessioned | 2017-04-21T06:55:23Z | - |
dc.date.available | 2017-04-21T06:55:23Z | - |
dc.date.issued | 2016-08 | en_US |
dc.identifier.issn | 0026-2714 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.microrel.2016.06.012 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134281 | - |
dc.description.abstract | A Sn/Bi bilayer was deposited on a hot air solder leveling (HASL)-treated metal-core printed circuit board (MCPCB) using electroplating as a low-temperature die-bonding material for light-emitting diode (LED). The eutectic feature of the Sn/Bi contact enabled the die-bonding process to accomplish through a liquid/solid reaction at 185 degrees C with a proper compression force. A high-temperature die-bonding structure composed of a Bi layer sandwiched by two intermetallic compounds (IMCs) formed after thermocompression. Employment of the Sn/Bi bilayer for low-temperature die-bonding prevented the LEDs from thermal stress problems, and the resulting high-temperature IMC/Bi/IMC die-bonding structure was capable of withstanding multiple bonding reactions and high temperature/current operation environment. Durability tests including mechanical, thermal, and optical performance were systematically performed and compared with other commercially available die-bonding materials (Ag paste and solder alloys). (C) 2016 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Microstructure | en_US |
dc.subject | Thermal | en_US |
dc.subject | Optical | en_US |
dc.subject | Low-temperature | en_US |
dc.subject | Die-bonding | en_US |
dc.title | Microstructural and thermal characterizations of light-emitting diode employing a low-temperature die-bonding material | en_US |
dc.identifier.doi | 10.1016/j.microrel.2016.06.012 | en_US |
dc.identifier.journal | MICROELECTRONICS RELIABILITY | en_US |
dc.citation.volume | 63 | en_US |
dc.citation.spage | 68 | en_US |
dc.citation.epage | 75 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000384776200011 | en_US |
顯示於類別: | 期刊論文 |