Investigation of the strained PMOS on (110) substrate

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DC Field	Value	Language
dc.contributor.author	Tang, Chun-Jung	en_US
dc.contributor.author	Huang, Shih-Hian	en_US
dc.contributor.author	Wang, Tahui	en_US
dc.contributor.author	Chang, Chih-Sheng	en_US
dc.date.accessioned	2017-04-21T06:49:43Z	-
dc.date.available	2017-04-21T06:49:43Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-0584-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134459	-
dc.description.abstract	This paper performed a detail study on the strained PMOS fabricated on the (I 10) Si substrate. We showed that in the (I 10) plane, the four-fold symmetry direction, <111(,)>, has the ideal band-structure features for the uniaxial-process-induced hole mobility enhancement. We then characterized the mobility and back scattering ratio of the (110)/<111(,)> PMOS with multiple process induced stressors.	en_US
dc.language.iso	en_US	en_US
dc.title	Investigation of the strained PMOS on (110) substrate	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS	en_US
dc.citation.spage	82	en_US
dc.citation.epage	+	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000247059300037	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper