完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tang, Chun-Jung | en_US |
dc.contributor.author | Huang, Shih-Hian | en_US |
dc.contributor.author | Wang, Tahui | en_US |
dc.contributor.author | Chang, Chih-Sheng | en_US |
dc.date.accessioned | 2017-04-21T06:49:43Z | - |
dc.date.available | 2017-04-21T06:49:43Z | - |
dc.date.issued | 2007 | en_US |
dc.identifier.isbn | 978-1-4244-0584-8 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134459 | - |
dc.description.abstract | This paper performed a detail study on the strained PMOS fabricated on the (I 10) Si substrate. We showed that in the (I 10) plane, the four-fold symmetry direction, <111(,)>, has the ideal band-structure features for the uniaxial-process-induced hole mobility enhancement. We then characterized the mobility and back scattering ratio of the (110)/<111(,)> PMOS with multiple process induced stressors. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Investigation of the strained PMOS on (110) substrate | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS | en_US |
dc.citation.spage | 82 | en_US |
dc.citation.epage | + | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000247059300037 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |