Low power 3 similar to 8-GHz UWB tunable LNA design using SiP technology

doi:10.1109/ICECS.2006.379966

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Yang Chuan	en_US
dc.contributor.author	Li, Chun-Hsing	en_US
dc.contributor.author	Huang, J. K.	en_US
dc.contributor.author	Kuo, Chien-Nan	en_US
dc.contributor.author	Cheng, Yu Ting	en_US
dc.date.accessioned	2017-04-21T06:49:46Z	-
dc.date.available	2017-04-21T06:49:46Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	978-1-4244-0394-3	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/ICECS.2006.379966	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134471	-
dc.description.abstract	In this paper we present a tunable ultra-wideband LNA using system-in-package solution to enhance gain and noise performance. Several high-Q MEMS inductors are employed at the input matching network and the tunable resonator load. SiP integration is realized by Au-Au thermal compression bond of low electrical parasitic effects. It is found those inductors improve noise figure by 2dB and help achieve gain flatness in a broad frequency range of 3- to 8-GRz.	en_US
dc.language.iso	en_US	en_US
dc.title	Low power 3 similar to 8-GHz UWB tunable LNA design using SiP technology	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/ICECS.2006.379966	en_US
dc.identifier.journal	2006 13TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3	en_US
dc.citation.spage	1026	en_US
dc.citation.epage	+	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000252489600256	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文