標題: Hole g-Factor Anisotropies in Individual InAs Quantum Rings
作者: Kaji, R.
Tominaga, T.
Wu, Y. -N.
Wu, M. -F.
Cheng, S. -J.
Adachi, S.
電子物理學系
Department of Electrophysics
關鍵字: g-factors;hole;quantum structures;InAs
公開日期: 2016
摘要: We investigated the electron and hole g-factors in individual InAs/GaAs quantum rings (QRs). From the magneto-photoluminescence measurements under a transverse magnetic field, we evaluated the in-plane g-factors of electron and hole spins by rotating the sample systematically around the crystal growth axis. The experimental results indicate that the in-plane and the out-of-plane anisotropies in hole g-factor are larger than those of electron g-factor, and the value of the hole in-plane g-factor varies largely from QR to QR while the electron g-factor is almost a constant value. From the model calculation considering the effects of shape anisotropies and uniaxial stress, we examined the correlation between the in-plane g-factors and the degree of valence band mixing. Further, the experimentally obtained trend in g-factors was in agreement qualitatively with theoretical consideration.
URI: http://hdl.handle.net/11536/134548
ISBN: 978-1-5090-1964-9
期刊: 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)
顯示於類別:會議論文